Navitas’ Gen-3 Fast SiC MOSFETs Accelerate Next-Gen AI Growth & EV Charging

June 6, 2024

https://www.globenewswire.com/news-release/2024/06/06/2894645/0/en/Navitas-Gen-3-Fast-SiC-MOSFETs-Accelerate-Next-Gen-AI-Growth-EV-Charging.html

TORRANCE, Calif., June 06, 2024 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq:NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, announces their new portfolio of Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs optimized for fastest switching speed, highest efficiency, and increased power density for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside super-chargers, and solar / energy-storage systems (ESS). The broad portfolio range covers industry-standard packages from D2PAK-7 to TO-247-4, designed for demanding, high-power, high-reliability applications.

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