Navitas Highlights EV High-speed Hybrid Power Semiconductor Advances in China Innovation Summit Keynote

April 25, 2024

https://www.globenewswire.com/news-release/2024/04/25/2869634/0/en/Navitas-Highlights-EV-High-speed-Hybrid-Power-Semiconductor-Advances-in-China-Innovation-Summit-Keynote.html

TORRANCE, Calif., April 25, 2024 (GLOBE NEWSWIRE) — Navitas Semiconductor (Nasdaq:NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced its participation in forthcoming China Electronic Hotspot Solutions Innovation Summit in Shenzhen on April 27th. The summit gathers key players in power semiconductors and associated customer design teams for innovations in EV such as 800 V supercharging, battery management, intelligent connected vehicle electronics, and high-power digital power supplies. 2024 EV OEM attendees include experts from Voyah and Dongfeng.

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